FDMC6296 N-Channel Power Trench® MOSFET
FDMC6296
Single N-Channel Logic-Level Power Trench® MOSFET
30 V, 11.5 A, 10.5 m...
FDMC6296 N-Channel Power Trench®
MOSFET
FDMC6296
Single N-Channel Logic-Level Power Trench®
MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A Low Qg, Qgd and Rg for efficient switching performance RoHS Compliant
November 2010
General Description
This single N-Channel
MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swtich or “low side” synchronous rectifier.
Application
Point of Load Converters 1/16 Brick Synchronous Rectifier
Top Pin 1 S S S G
Bottom D D D D D D D D 8 1 S 5 6 7 4 3 2 G S S
MLP 3.3X3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current Power Dissipation Power Dissipation -Continuous -Pulsed TC = 25 °C TA = 25 °C (Note 1a) TA = 25 °C (Note 1a) Ratings 30 ±20 11.5 40 2.1 0.9 -55 to +150 W °C Units V V A
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC6296 Device FDMC6296 Package MLP 3.3X3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units
©2010 Fairchi...