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FDMC6890NZ

Fairchild Semiconductor

Dual N-Channel PowerTrench MOSFET

www.DataSheet4U.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET October 2006 FDMC6890NZ Dual N-Channel PowerTrench®...


Fairchild Semiconductor

FDMC6890NZ

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www.DataSheet4U.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET October 2006 FDMC6890NZ Dual N-Channel PowerTrench® MOSFET 20V, 4A, Q1:68mΩ, Q2:100mΩ Features Q1: N-Channel „ Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A „ Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A Q2: N-Channel „ Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A „ Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A „ Low gate Charge „ RoHS Compliant tm General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Application „ DC - DC Conversion Up S1 D1/S2 D2 Bottom G1 D1/S2 G2 D2 4 3 G2 D1 D2 D1/S2 5 S1 2 D1/S2 G1 G1 D1/S2 G2 Power 33 S1 D1/S2 D2 6 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation (Steady State) Q1 Power Dissipation (Steady State) Q2 Operating and Storage Junction Temperature Range (Note 1a) Q1 20 ±12 4 10 1.92 1.78 -55 to +150 Q2 20 ±12 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Q1 Q2 (Note 1a) 65 70 °C/W Package Marking and Ordering Information Dev...




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