FDMC7200

FDMC7200 Dual N-Channel PowerTrench® MOSFET FDMC7200 June 2009 Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications „ Mobile Computing „ Mobile Internet Devices „ General Purpose Point of Load Pin 1 D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 VIN VIN VIN GHS VIN SWITCH NODE GND GND GND GLS BOTTOM BOTTOM Power 33 S2 5 S2 6 S2 7 G2 8 Q2 4 D1 3 D1 2 D1 Q1 1 G1 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) - Continuous (Silicon limited) - Continuous - Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C TA = 25 °C TA = 25 °C Q1 Q2 30 30 ±20 ±20 88 20 40 6 1a 8 1b 40 1.9 1a 0.7 1c 40 2.2 1b 0.9 1d -55 to +150 Units V V A W...