FDMC86102 N-Channel Power Trench® MOSFET
March 2012
FDMC86102
N-Channel Power Trench® MOSFET
100 V, 20 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Sem...
