FDMC86520L

FDMC86520L N-Channel PowerTrench® MOSFET August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Top Pin 1 S S S G Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 60 ±20 22 55 13.5 60 79 40 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.1 53 °C/W Package Marking and Ordering Inf...