FDMC8884 N-Channel Power Trench® MOSFET
April 2012
FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
Features
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FDMC8884 N-Channel Power Trench®
MOSFET
April 2012
FDMC8884
N-Channel Power Trench®
MOSFET
30 V, 15 A, 19 mΩ
Features
Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook
Top Pin 1 S S S G
Bottom
D D D D D
5 6 7 8
4 3 2 1
G S S S
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 30 ±20 15 24 9.0 40 24 18 2.3 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.6 53 °C/W
Packag...