FDMQ8203

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET FDMQ8203 December 2011 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench® MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel „ Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A „ Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A „ Substantial efficiency benefit in PD solutions „ RoHS Compliant This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Application „ High-Efficiency Bridge Rectifiers Top G4 S4 S4 G3 S3 S3 Bottom D3/ D1/ D4 D2 D3/ D1/ D4 D2 G1 S1 S1 G2 S2 S2 Pin 1 MLP 4.5x5 S3 7 S3 8 Q3 (Pch) Q2 (Pch) 6 S2 5 S2 G3 9 4 G2 S4 10 S4 11 Q4 (Nch) Q1 (Nch) 3 S1 2 S1 G4 12 1 G1 D3,D4 to backside (isolated from D1,D2) D1,D2 to backside MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Power Dissipation for Single Operation TC = 25 °C Power Dissipation for Dual Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Q1/Q4 Q2/Q3 100...