MOSFET – N-Channel, POWERTRENCH)
80 V, 100 A, 3.9 mW
FDMS039N08B
General Description This N−Channel MOSFET is produce...
MOSFET – N-Channel, POWERTRENCH)
80 V, 100 A, 3.9 mW
FDMS039N08B
General Description This N−Channel
MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Features
Max RDS(on) = 3.2 mW (Typ.) @ VGS = 10 V, ID = 50 A Low FOM RDS(on) * QG Low Reverse Recovery Charge, Qrr = 80 nC Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
FDMS039N08B Unit
VDSS VGSS
ID
IDM
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current − Continuous (TC = 25°C) − Continuous (TA = 25°C) (Note 1a)
Drain Current − Pulsed (Note 2)
80
V
±20
V
A 100 19.4
mJ 400
EAS Single Pulse Avalanche Energy (Note 3)
240
mJ
PD Power Dissipation (TC = 25°C) (TA = 25°C) (Note 1a)
W 104 2.5
TJ, TSTG Operating and Storage Temperature Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TC = 25°C, unless oth...
