FDMS2D4N03S

FDMS2D4N03S N-Channel PowerTrench® MOSFET www.onsemi.com FDMS2D4N03S N-Channel PowerTrench® SyncFETTM 30 V, 163 A, 1.8 mΩ Features General Description „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU Low Side Switch „ Networking Point of Load Low Side Switch „ Telecom Secondary Side Rectification D D D D D5 4G D6 G S S S Pin 1 D7 D8 Top Bottom Power 56 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 30 ±16 163 103 28 694 175 74 2.5 -55 to +150 Units V V A mJ W °...