FDMS3602AS PowerTrench® Power Stage
FDMS3602AS
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N...
FDMS3602AS PowerTrench® Power Stage
FDMS3602AS
PowerTrench® Power Stage
Asymmetric Dual N-Channel
MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing RoHS Compliant
March 2011
General Description
This device includes two specialized N-Channel
MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load Notebook VCORE
Pin 1
G...