FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
...
FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel
MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel
MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Sever
G1 D1 D1 D1 D1
PHASE (S1/D2)
G2S2S2 S2
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous (Package limited)
-Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA RθJC
Thermal Resistance,...