FDMS3662

FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ 100% UIL Tested „ RoHS Compliant Application „ DC - DC Conversion Top Bottom Pin 1 Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction ...