FDMS7620S Dual N-Channel PowerTrench® MOSFET
FDMS7620S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 13 A, 20.0 mΩ Q2: 3...
FDMS7620S Dual N-Channel PowerTrench®
MOSFET
FDMS7620S
Dual N-Channel PowerTrench®
MOSFET
Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ
Features
Q1: N-Channel Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A Q2: N-Channel Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A Pinout optimized for simple PCB design Thermally efficient dual Power 56 Package RoHS Compliant
General Description
This device includes two specialized
MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side”
MOSFET is complementory by a low conduction loss “Low Side” SyncFET.
Applications
Synchronous Buck Converter for: Notebook System Power General Purpose Point of Load
S2
S2 S2
5
Q2
4
G2
S1/D2
6
3
D1
D1 D1
7
2
D1 G1
Top
Bottom Pin1
8
1
Q1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous
-Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) TC = 25 °C TA = 25 °C
(Note 4) TA = 25°C TA = 25°C
Q1
Q2
30
30
±20
±20
13
22
10.1
12.4
27
45
9 2.21...