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FDMS7620S

ON Semiconductor

Dual N-Channel MOSFET

FDMS7620S Dual N-Channel PowerTrench® MOSFET FDMS7620S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 13 A, 20.0 mΩ Q2: 3...


ON Semiconductor

FDMS7620S

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Description
FDMS7620S Dual N-Channel PowerTrench® MOSFET FDMS7620S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ Features Q1: N-Channel „ Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A „ Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A Q2: N-Channel „ Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A „ Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A „ Pinout optimized for simple PCB design „ Thermally efficient dual Power 56 Package „ RoHS Compliant General Description This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET. Applications Synchronous Buck Converter for: „ Notebook System Power „ General Purpose Point of Load S2 S2 S2 5 Q2 4 G2 S1/D2 6 3 D1 D1 D1 7 2 D1 G1 Top Bottom Pin1 8 1 Q1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) TC = 25 °C TA = 25 °C (Note 4) TA = 25°C TA = 25°C Q1 Q2 30 30 ±20 ±20 13 22 10.1 12.4 27 45 9 2.21...




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