FDMS7656AS N-Channel PowerTrench® SyncFET™
FDMS7656AS
N-Channel PowerTrench® SyncFET™
30 V, 49 A, 1.8 mΩ
October 2014
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FDMS7656AS N-Channel PowerTrench® SyncFET™
FDMS7656AS
N-Channel PowerTrench® SyncFET™
30 V, 49 A, 1.8 mΩ
October 2014
Features
General Description
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S D5
4G
S
S G
D6
3S
D7
2S
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
dv/dt EAS PD TJ, TSTG
Parameter
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
MOSFET dv/dt
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D8
(Note 4) (Note 1a)
(Note 3) (Note 1a)
1S
Ra...