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FDMS7680 Datasheet

Part Number FDMS7680
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMS7680 DatasheetFDMS7680 Datasheet (PDF)

FDMS7680 N-Channel PowerTrench® MOSFET October 2014 FDMS7680 N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ Features General Description „ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize sw.

  FDMS7680   FDMS7680






Part Number FDMS7682
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS7680 DatasheetFDMS7682 Datasheet (PDF)

FDMS7682 N-Channel PowerTrench® MOSFET January 2015 FDMS7682 N-Channel PowerTrench® MOSFET 30 V, 6.3 mΩ Features „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed spe.

  FDMS7680   FDMS7680







N-Channel MOSFET

FDMS7680 N-Channel PowerTrench® MOSFET October 2014 FDMS7680 N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ Features General Description „ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S S D S S G S D D D D D Power 56 S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Rating.


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