FDMS8090

FDMS8090 PowerTrench® Symmetrical Dual April 2013 FDMS8090 PowerTrench® Symmetrical Dual 100 V N-Channel MOSFET Features „ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ 100% UIL tested „ RoHS Compliant General Description This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications „ Bridge Topologies „ Synchronous Rectifier Pair „ Motor Drives Top Pin 1 Bottom S2 S2 S2 G2 D2 D1 Power 56 S1 S1 S1 G1 Pin 1 G1 1 S1 2 S1 3 S1 4 Contact to D1 Contact to D2 (backside) (backside) Q1 Q2 8 G2 7 S2 6 S2 5 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG ...