FDMS86101 N-Channel PowerTrench® MOSFET
October 2012
FDMS86101
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ Feature...
FDMS86101 N-Channel PowerTrench®
MOSFET
October 2012
FDMS86101
N-Channel PowerTrench®
MOSFET
100 V, 60 A, 8 mΩ Features General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested 100% Rg tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom S Pin 1 S S S G S S D D D G D D D D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 60 12.4 200 173 104 2.5 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 °C/W
Package Marking and Ordering Information
Device Marking FDMS86101 Device FDMS86101 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMS...