FDMS86150

FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ March 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ Primary DC-DC MOSFET „ Secondary Synchronous Rectifier „ Load Switch Top Bottom S Pin 1 S D Pin 1 S S G S D D D D D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 80 16 300 726 156 2.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.8 (Note 1a...