FDMS86152

FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ March 2015 Features General Description „ Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applications „ Primary DC-DC MOSFET „ Secondary Synchronous Rectifier „ Load Switch Top Pin 1 Bottom Pin 1 SSSG S S D D DDDD S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 45 14 260 541 125 2.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.0 (Note 1a) 45 °C/W Device Marking FDMS86152 Device FDMS86152 Package Power 56 Reel Size 13 ’’ Tape Width 12 ...