FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET
January 2015
FDMS86255ET150
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 63 A, 12.4 mΩ
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust pack.
MOSFET
FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET
January 2015
FDMS86255ET150
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 63 A, 12.4 mΩ
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications
OringFET / Load Switching
Synchronous rectification
DC-DC Conversion
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSF.