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FDMS86255ET150 Datasheet

Part Number FDMS86255ET150
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS86255ET150 DatasheetFDMS86255ET150 Datasheet (PDF)

FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 63 A, 12.4 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust pack.

  FDMS86255ET150   FDMS86255ET150






MOSFET

FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 63 A, 12.4 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ OringFET / Load Switching „ Synchronous rectification „ DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSF.


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