FDMS86263P

MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications 100% Uil Tested This Device is Pb−Free and is RoHS Compliant Applications Active Clamp Switch Load Switch DATA SHEET www.onsemi.com VDS −150 V rDS(on) MAX 53 mW @ −10 V 64 mW @ −6 V ID MAX −22 A Pin 1 S SSG DDDD Top Bottom PQFN8 5X6, 1.27P (Power 56) CASE 483AE MARKING DIAGRAM $Y&Z&2&K FDMS 86263P $Y = Logo &Z = Assembly Plant Code &2 = 2−Digit Date Code Format &K = 2−Digits Lot Run Traceability Code FDMS86263P = Specific Device Code PIN ASSIGNMENT S1 8D S2 7D S3 G4 6D 5D ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 July, 2022 − Rev. 3 Publication Order Number: FDMS86263P/D FDMS86263P MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current Contin...