FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSF...
FDMS86300DC N-Channel Dual CoolTM Power Trench®
MOSFET
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench®
MOSFET
80 V, 60 A, 3.1 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side
D
D
D D
S S
D D D D
Pin 1
S G
S
S S S Bottom Pin 1 G
Top
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 80 ±20 60 148 24 150 240 125 3.2 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJC RθJA RθJA...