FDMS86310

FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features „ Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant October 2014 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Primary Switch „ Synchronous Rectifier „ Motor Switch Top Pin 1 Bottom Pin 1 S S D S S G S D S D Power 56 D D D D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 80 ±20 50 105 17 100 183 96 2.5 -55 to +150 Units V V A mJ W °C RθJ...