FDMS86520L

FDMS86520L N-Channel PowerTrench® MOSFET FDMS86520L N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.2 mΩ October 2014 Features General Description „ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ RoHS Compliant „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Top Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 60 ±20 22 13.5 60 91 69 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Orderin...