FDMS86550ET60

FDMS86550ET60 N-Channel PowerTrench® MOSFET January 2015 FDMS86550ET60 N-Channel PowerTrench® MOSFET 60 V, 245 A, 1.65 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Primary DC-DC MOSFET „ Secondary Synchronous Rectifier „ Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Cont...