FDMS8670AS

FDMS8670AS N-Channel PowerTrench® SyncFETTM April 2008 FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mΩ tm Features General Description „ Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A „ Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Pin 1 S S S G D D D D Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 30 ±20 42 127 23 200 384 50 2.5 -55 to +150 Units V V ...