FDMS8672S

FDMS8672S N-Channel PowerTrench® SyncFETTM February 2007 FDMS8672S N-Channel PowerTrench® SyncFETTM 30V, 35A, 5mΩ Features General Description „ Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant tm The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Pin 1 S S 5 S G www.DataSheet4U.com 4 3 2 1 6 7 D D D D Power 56 (Bottom view) 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C Ratings 30 ±20 35 90 17 200 50 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Cas...