FDMS8680

FDMS8680 N-Channel PowerTrench® MOSFET FDMS8680 N-Channel PowerTrench® MOSFET 30V, 35A, 7.0m: October 2014 tm Features General Description „ Max rDS(on) = 7.0m:at VGS = 10V, ID = 14A „ Max rDS(on) = 11.0m: at VGS = 4.5V, ID = 11.5A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications „ Low Side for Synchronous Buck to Power Core Processor „ Secondary Side Synchronous Rectifier „ Low Side Switch in POL DC/DC Converter „ Oring FET/ Load Switch Top Bottom Pin 1 S S S G D5 D6 D D D D Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 35 63 14 100 216 50 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Markin...