FDMS8692

FDMS8692 N-Channel PowerTrench® MOSFET July 2007 FDMS8692 N-Channel PowerTrench® MOSFET 30V, 28A, 9.0mΩ Features „ Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 12A „ Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 10.5A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant General Description The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications „ High Side for Synchronous Buck to Power Core Processor „ Secondary Side Synchronous Rectifier „ High Side Switch in POL DC/DC Converter „ Oring FET/ Load Switch Pin 1 S S S D G D D D D D Power 56 (Bottom view) D 5 6 7 8 4 3 2 1 G S S S D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 28 48 12 120 150 41 2.5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 50 °C/W Package Mar...