FDMS8888

FDMS8888 N-Channel PowerTrench® MOSFET June 2015 FDMS8888 NNNN N-Channel PowerTrench® MOSFET 30 V, 21 A, 9.5 m: Features General Description „ Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency The FDMS8888 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. „ MSL1 robust package design „ RoHS Compliant Applications „ Synchronous Buck for Notebook Vcore and Server „ Notebook Battery Pack „ Load Switch Top Bottom Pin 1 S S S G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Parameter Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D5 D6 D7 D8 (Note 1a) (Note 3) (Note 1a) 4G 3S 2S 1S Ratings 30 ±20 21 51 13.5 80 54 42 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.3 (Note 1a) 50 °C/W ...