FDMS9410_F085

FDMS9410_F085 N-Channel PowerTrench® MOSFET FDMS9410_F085 N-Channel PowerTrench® MOSFET 40 V, 50 A, 4.4 mΩ August 2015 Features „ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 50 A „ Typical Qg(tot) = 24 nC at VGS = 10V, ID = 50 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild web‐ site  at  https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 50 See Figure 4 39 75 0.5 -55 to + 175 2 50 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 28A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference...