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FDMT800120DC Datasheet

Part Number FDMT800120DC
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDMT800120DC DatasheetFDMT800120DC Datasheet (PDF)

DATA SHEET www.onsemi.com MOSFET – N-Channel, DUAL COOL ), POWERTRENCH) 120 V, 128 A, 4.2 mW FDMT800120DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 6.4.

  FDMT800120DC   FDMT800120DC






Part Number FDMT800120DC
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMT800120DC DatasheetFDMT800120DC Datasheet (PDF)

FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120 V, 128 A, 4.2 mΩ Features „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package General Description This N-Channel MOSFET is produced .

  FDMT800120DC   FDMT800120DC







N-Channel MOSFET

DATA SHEET www.onsemi.com MOSFET – N-Channel, DUAL COOL ), POWERTRENCH) 120 V, 128 A, 4.2 mW FDMT800120DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery • Low Profile 8 x 8 mm MLP Package • MSL1 Robust Package Design • 100% UIL Tested • This Device is RoHS Compliant Typical Applications • OringFET / Load Switching • Synchronous Rectification • DC−DC Conversion VDS 120 V RDS(on) MAX 4.2 mW @ 10 V 6.4 mW @ 6 V ID MAX 128 A Top Bottom TDFNW8 8.3 x 8.4, 2P, DUAL COOL, OPTION 2 CASE 507AR MARKING DIAGRAM 800120 A WL Y W = Device Code = Assembly Location = Wafer Lot = Year = Work Week ELECTRICAL CONNECTION G D S D S D S D N-Channel MOSFET ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2015 1 January, 2023 − Rev. 3 Publication Order Number: FDMT800120DC/D FDMT800120DC MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol.


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