MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ
General Description This P−Channel 1.8 V specified MOSFET us...
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ
General Description This P−Channel 1.8 V specified
MOSFET uses onsemi’s advanced
low
voltage POWERTRECH process. It has been optimized for battery power management applications.
Features
–20 V, –2.4 A RDS(on) = 52 mW @ VGS = –4.5 V
RDS(on) = 70 mW @ VGS = –2.5 V RDS(on) = 100 mW @ VGS = –1.8 V
Fast Switching Speed ESD Protection Diode High Performance Trench Technology for Extremely Low RDS(on) SUPERSOTt−3 Provides Low RDS(on) and 30% Higher Power
Handling Capability than SOT−23 in the Same Footprint
This is a Pb−Free and Halide Free Device
Applications
Battery Management Load Switch Battery Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
VDSS VGSS
ID
Drain−Source
Voltage
Gate−Source
Voltage
Drain Current – Continuous (Note 1a) – Pulsed
–20
V
±8
V
A –2.4 –10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W 0.5 0.46
TJ, TSTG Operating and Storage Junction Temperature Range
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1a)
250
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 1)
75
°C/W
DATA SHE...
