FDN327N

MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V Low Gate Charge (4.5 nC typical) Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(on) This Device is Pb−Free and Halogen Free Applications Load Switch Battery Protection Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) 2 A Drain Current – Pulsed 8 PD Power Dissipation for Single Operation 0.5 W (Note 1a) Power Dissipation for Single Operation 0.46 (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com D G S D G S SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG MARKING DIAGRAM 327M 327 = Specific Device Code M = Assemble Operation Month ORDERING INFORMATION Device FDN327N Package Shipping† SOT−23−3 3000 / (Pb−Free/Halide Free) Tape & Re...