FDN336P

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 6 33 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other wise noted FDN336P -20 ±8 Units V V A - Continuous - Pulsed -1.3 -10 (Note 1a) (Note 1b) Maximum Power Dissipation 0.5 0.46 -55 to +150 W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDN336P Rev.C Electrical Characteristics (TA = 25 OC unless ot...