FDN339AN

FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V. Low gate charge (7nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Load switch D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 3 20 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Outlines and Ordering Information Device Marking 339 Device FDN339AN Reel Size 7’’ Tape Width 8mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDN339AN Rev. C FDN339AN Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source B...