FDN340P

FDN340P September 200 February 2007 FDN340P SingleP-Channel, LogicLevel, PowerTrench® MOSFET GeneralDescription This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPower Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. These devicesare well suited for portable electronics applications:load switching and power management, batterychargingcircuits,andDC/DC conversion. Features –2A,20 V RDS(ON)=70 mΩ @ VGS =–4.5 V RDS(ON)=110 mΩ @ VGS =–2.5 V Low gate charge (7.2 nC typical). Highperformance trenchtechnology for extremely low RDS(ON). Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-23with30% higher power handlingcapability. ¡ £¥¤§¦©¨£¥©  ! "$#&%   ¢ AbsoluteM axim um Ratings TA=25oC unlessotherwise noted Sym bol VDSS V GSS ID PD TJ,TSTG Param eter Drain-Source Voltage Gate-Source Voltage DrainCurrent – Continuous (Note 1a) – Pulsed Power Dissipationfor Single Operation (Note 1a) (Note 1b) OperatingandStorage JunctionTemperature Range Therm alCharacteristics RθJA Thermal Resistance,Junction-to-Ambient RθJC Thermal Resistance,Junction-to-Case (Note 1a) (Note 1) PackageMarking and Ordering Inform ation Device M arking Device ReelSize 340 FDN340P 7’’ ©2007 Fairchild Semiconductor Corporation D GS Ratings –20 ±8 –2 –10 0.5 0.46 –55 to +150 250 75 Tape width 8mm Units V V ...