FDN5632N-F085

FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET 60 V, 1.6 A, 98 mΩ Features „ RDS(on) = 98 mΩ at VGS = 4.5 V, ID = 1.6 A „ RDS(on) = 82 mΩ at VGS = 10 V, ID = 1.7 A „ Typ Qg(TOT) = 9.2 nC at VGS = 10 V „ Low Miller Charge „ UIS Capability „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC/DC converter „ Motor Drives MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed EAS PD TJ, TSTG RθJC RθJA Single Pulse Avalanche Energy (Note 1) Power Dissipation Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Note: 1: EAS of 74mJ is 100% test at L=80mH, IAS=1.4A, starting TJ = 25 oC Ratings 60 ±20 1.7 10 74 1.1 -55 to +150 75 111 Units V V A mJ W oC oC/W oC/W Package Marking and Orderi...