FDN8601

MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness. Features Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package Fast Switching Speed 100% UIL Tested This Device is Pb−Free, Halide Free and is RoHS Compliant Applications Primary DC−DC Switch Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous (Note 1a) Pulsed 100 V ±20 V 2.7 A 12 EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation (Note 1a) (Note 1b) 13 mJ 1.5 W 0.6 TJ, TSTG Operating and Storage Junction Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction to Case (Note 1) 75 °C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a) 80 °C/W DATA SHEET www.onsemi.com VD...