isc N-Channel MOSFET Transistor
FDP030N06
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resis...
isc N-Channel
MOSFET Transistor
FDP030N06
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
60
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
193
A
IDM
Drain Current-Single Pulsed
772
A
PD
Total Dissipation
231
W
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
0.65
℃/W
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isc N-Channel
MOSFET Transistor
FDP030N06
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 250uA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=250uA
60
V
2.5
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 75A
3.2
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS=±20V;VDS= 0V
VDS= 48V; VGS= 0V VDS= 48V; VGS= 0V;TJ=125℃
ISD= 75A, VGS = 0 V
±100 nA
1 100
μA
1.3
V
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