FDP030N06

isc N-Channel MOSFET Transistor FDP030N06 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 193 A IDM Drain Current-Single Pulsed 772 A PD Total Dissipation 231 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.65 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDP030N06 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250uA 60 V 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 75A 3.2 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±20V;VDS= 0V VDS= 48V; VGS= 0V VDS= 48V; VGS= 0V;TJ=125℃ ISD= 75A, VGS = 0 V ±100 nA 1 100 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time ...