FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET
FDP045N10A / FDI045N10A
N-Channel PowerTrench® MOSFET
100 V, 16...
FDP045N10A / FDI045N10A — N-Channel PowerTrench®
MOSFET
FDP045N10A / FDI045N10A
N-Channel PowerTrench®
MOSFET
100 V, 164 A, 4.5 mΩ
November 2013
Features
RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A Fast Switching Speed Low Gate Charge, QG = 54 nC (Typ.) High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability
RoHS Compliant
Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter
D
GDS
TO-220
GDS
I2-PAK
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source
Voltage
Gate to Source
Voltage Drain Current Drain Current
- Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon LImited) - Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
FDP045N10A_F102 FDI045N10A_F102
100 ±20 164* 116 120 656 637 6.0 263 1.75
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
*...