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FDP054N10 Datasheet

Part Number FDP054N10
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP054N10 DatasheetFDP054N10 Datasheet (PDF)

FDP054N10 — N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-stat.

  FDP054N10   FDP054N10






Part Number FDP054N10
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FDP054N10 DatasheetFDP054N10 Datasheet (PDF)

isc N-Channel MOSFET Transistor FDP054N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuou.

  FDP054N10   FDP054N10







N-Channel MOSFET

FDP054N10 — N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Avalanche Energy Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDP054N10 .


2015-10-13 : RS60E561MCN1JT    RS61A151MCN1JT    RS61C101MDS1JT    RS61C101MCS1JT    RS61E330MCN1JT    RS60E561MCN1PX    RS61A151MCN1PX    RS61C101MDS1PX    RS61C101MCS1PX    RS61E330MCN1PX   


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