FDP070AN06A0

FDP070AN06A0 — N-Channel PowerTrench® MOSFET October 2013 FDP070AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 7 mΩ Features Applications RDS(on) = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 51 nC (Typ.) @ VGS = 10 V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82567 D GDS TO-220 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 97oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient, Max. (Note 2) S FDP070AN06A0 60 ±20 80 Figure 4 190 175 1.17 -55 to 175 0.86 62 Unit V V A A mJ W W/oC oC oC/W oC/W ©2003 Fairchild Semiconductor Corporation FDP070AN06A0 Rev. C2 1 www.fairchildsemi.com FDP070AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP070AN06A0 Device FDP070AN06A0 Package TO-220 Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ...