FDP083N15A

FDP083N15A — N-Channel PowerTrench® MOSFET April 2015 FDP083N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ Features RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 64.5 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC (f > 1 Hz) - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDP083N15A_F102 150 ±20 ±30 117 83 468 542 6 294 1.96 -55 to +175 300 Unit V V A A mJ V/ns W W/oC oC oC Thermal Characteristics Symbol Parameter RθJC RθJA ...