FDP10N60NZ

FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A Low Gate Charge (Typ. 23 nC) Low Crss (Typ. 10 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability RoHS Compliant FDP10N60NZ / FDPF10N60NZ Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications LCD/ LED/ PDP TV Lighting Uninterruptible Power Supply D GD S G TO-220 G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate Above 25oC (TC = 25oC) - Continuous (TC = 25oC) - Pulsed 10 6 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 185 1.5 -55 to +150...