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FDP120N10 Datasheet

Part Number FDP120N10
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDP120N10 DatasheetFDP120N10 Datasheet (PDF)

FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state .

  FDP120N10   FDP120N10






Part Number FDP120N10
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FDP120N10 DatasheetFDP120N10 Datasheet (PDF)

isc N-Channel MOSFET Transistor FDP120N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous.

  FDP120N10   FDP120N10







MOSFET

FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micor Solar Inverter D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC =.


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