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FDP2572
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor ·FEATURES ·With TO-220 packaging ·Drain Source
Voltage
- : VDSS ≥ 150V ·Static drain-source on-resistance: RDS(on) ≤ 54mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY...
INCHANGE
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Similar Datasheet
FDP2572
N-Channel MOSFET
- Fairchild Semiconductor
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