FDP33N25 — N-Channel UniFETTM MOSFET
FDP33N25
N-Channel UniFETTM MOSFET
250 V, 33 A, 94 mΩ
Features
• RDS(on) = 94 mΩ (...
FDP33N25 — N-Channel UniFETTM
MOSFET
FDP33N25
N-Channel UniFETTM
MOSFET
250 V, 33 A, 94 mΩ
Features
RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A Low Gate Charge (Typ. 36.8 nC) Low Crss (Typ. 39 pF) 100% Avalanche Tested
Applications
PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
November 2013
Description
UniFETTM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-Source
Voltage Drain Current
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Gate-Source
voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C) - Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, ...