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FDP33N25 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number FDP33N25
Description N-Channel MOSFET
Feature www.
DataSheet4U.
com FDP33N25 250V N-Cha nnel MOSFET FDP33N25 250V N-Channel MO SFET Features
• 33A, 250V, RDS(on) = 0.
094Ω @VGS = 10 V
• Low gate charge ( typical 36.
8 nC)
• Low Crss ( typi cal 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt cap ability UniFET Description July 2006 TM These N-Channel enhancement mode p ower field effect transistors are produ ced using Fairchild’s proprietary, pl anar stripe, DMOS technology.
This adva nced technology has been especially tai lored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu .
Manufacture Fairchild Semiconductor
Datasheet
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FDP33N25

 

 

 


 

 

 

Part Number FDP33N25
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor FDP33N2 5 FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 94mΩ(Max) ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation DESCRIPTION ·m otor drive, DC-DC converter, power swit ch and solenoid drive.
ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 250 V VGS Gate-Source Voltage-Con tinuous ±30 V ID Drain Current-Con tinuous 33 A PD Total Dissipation @ TC=25℃ 132 W TJ Max.
O .
Manufacture Inchange Semiconductor
Datasheet
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FDP33N25

 

 

 

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