FDP3651U

FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A High Performance Trench Technology for Extremely Low RDS(on) Low Miller Charge UIS Capability (Single Pulse and Repetitive Pulse) Applications Consumer Appliances Synchronous Rectification Battery Protection Circuit Motor drives and Uninterruptible Power Supplie s Micro Solar Inverter D GD S G TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGSS ID PD EAS TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Single Pulsed Avalanche Energy Operating and Storage Temperature Maximum lead temperature soldering purposes, 1/8” from case for 5 seconds (Note 2) (Note 1) FDP3651U 100 ±20 80 320 255 266 -55 to 175 300 Unit V V A W mJ °C °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient, Max. Thermal Resistance , Junction to Case, Max. 62 0.59 °C/W °C/W Package Marking and Ordering Information Device Marking FDP3651U Device FDP3651U Reel Size Tube Tape Width N/A Quantity 50 units ©2006 Fairchild Semiconductor Corporation FDP3651U Rev. C1 1 www.fairchildsemi.com http://www.Datasheet4U.com FDP3651U — N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS I...