FDP6021P

FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating Applications Battery management Load switch Voltage regulator . D G S G G D S TO-220 FDP Series S TO-263AB FDB Series D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1) (Note 1) Units V V A W W °C °C –28 –80 37 0.25 –65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6021P FDB6021P Device FDP6021P FDB6021P Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2001 Fairchild Semiconductor Corporation FDP6021P/FDB6021P Rev B(W) FDP6021P/FDB6021P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGS...